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Download Staining Method to Identify Silicon Epi/Poly Si 
Application Note: CAL021209_1
区分单/多晶硅层与硅基底的蚀刻流程
Staining Method to Identify the Interface between Silicon Epi/Poly Silicon and Silicon Substrate
1．准备工作 (Preparation)
原料 (Materials Required)： 去离子水, (DI Water (H2O)), 丙酮, (Acetone (CH3COCH3)),
三氧化铬, (Chromium Trioxide (CrO3)), 49% 氢氟酸, (49% Hydrogen Fluoride (49% HF))
配制溶液 (Preparing the Solution)：
(1) 将15克三氧化铬(CrO3)加入100毫升去离子水中制得溶液A；(Dissolve 15 grams of Chromium Trioxide into 100 ml DI water to obtain solution A)
(2) 量取与溶液A等体积的49% 氢氟酸得溶液B；(Volume wise, prepare the same amount of 49% Hydrogen Fluoride as solution A to obtain solution B)
(3) 将溶液 A 与溶液B混合得溶液C；(Mix solution A and B to get solution C)
(4) 用去离子水将C溶液稀释20 倍 (1 份体积的C溶液加入19份体积的去离子水) 制得溶液D； (Dilute solution C using DI water by 20 times (Volume ratio 1:19)),
2．具体流程 (Detailed Procedures)
(1) 将样品放入去离子水中浸泡2分钟；(Soak the sample in DI water for 2 minutes)
(2) 取出样品，并将其放入丙酮中浸泡2分钟； (Take the sample out and soak it in acetone for another 2 minutes)
(3) 将样品从丙酮中取出，用去离子水冲洗后，浸泡在去离子水中1分钟； (Take the sample out from acetone, and soak it in DI water for 1 minute)
(4) 将样品从去离子水中取出，放入D 溶液浸泡10至15分钟； (Take the sample out from DI water and put it into solution D for 10 to 15 minutes)
(5) 将浸泡后的样品取出，用去离子水冲洗后在去离子水中浸泡2分钟； (Take the sample out, rinse it with DI water and soak it in DI water for 2 minutes)
(6) 将样品取出，并用氮气吹干； (Pick up the sample and dry the sample with Nitrogen gas)
(7) 吹干后的样品可以 通过电子显微镜 (SEM) 观察其界面及形貌。 (Sample is ready for SEM imaging)
3．注意事项 (Attention)
(1) 所有操作应在通风橱内进行，操作人员应注意防护措施 (防护服，防护镜，口罩，手套)；
(All the operations should be carried out in fume hood. Lab coat, gargle, helmet and gloves are required)
(2) 本实验中的一切容器皆为塑料或高聚物，不可以用玻或石英器皿； (All the containers used should be either plastics or polymers. Neither glass nor quartz containers are allowed)
(3) 注意废液处理（有毒）。 (Poisonous wastes should be properly disposed)
4．结果比较 (Results)
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