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Download ET Comparison Brochure 
Turn key CVD systems for nanomaterial synthesis and thin film deposition
First Nano is proud to offer EasyTube™ turn key CVD systems for nanomaterial synthesis and thin film deposition. The EasyTube™ product line is designed and manufactured modularly. All EasyTube™ systems offer standard configuration including computer controlled operation, recipe driven process, automatic loader, and comprehensive software and hardware interlocks. There are different options available on each EasyTube™ system that allow user to configure the system in different ways to meet their special requirement. Those options include heating methods, wafer size, precursor chemicals selection, operating pressure, plasma choice, loadlock, etc. Most options can be added in the field; the EasyTube™ system can be continuously upgraded to meet the new requirement.
EasyTube™ system offers reliability, flexibility, and safety in one platform. First Nano provides recipes for nanomaterials synthesis and thin film deposition with the system. We also offer EasyGas™ Gas Cabinets and EasyExhaust™ Gas Conditioning systems to support the EasyTube System. The EasyTube™ turn key solution is clearly the best choice for your materials synthesis.
EasyTube™ (ET) Comparison Chart:
STANDARD FEATURES:
CVDWinPrC™ Process Control:
ET101 (Thermal CVD):
ET2000 (Thermal CVD):
ET3000 (Thermal CVD):
ET4000 (PECVD):
ET6000 (Thermal CVD):
System Safety:
ET101 (Thermal CVD):
ET2000 (Thermal CVD):
ET3000 (Thermal CVD):
ET4000 (PECVD):
ET6000 (Thermal CVD):
Mass Flow Controlled Gas Lines:
ET101 (Thermal CVD):
ET2000 (Thermal CVD):
ET3000 (Thermal CVD):
ET4000 (PECVD):
ET6000 (Thermal CVD):
Standard Gas Lines:
ET101 (Thermal CVD): 4
ET2000 (Thermal CVD): 4
ET3000 (Thermal CVD): 4
ET4000 (PECVD): 4
ET6000 (Thermal CVD): 4
System Safety Enclosure:
ET101 (Thermal CVD):
ET2000 (Thermal CVD):
ET3000 (Thermal CVD):
ET4000 (PECVD):
ET6000 (Thermal CVD):
Factory Training:
ET101 (Thermal CVD):
ET2000 (Thermal CVD):
ET3000 (Thermal CVD):
ET4000 (PECVD):
ET6000 (Thermal CVD):
On-Site Start-Up Assistance:
ET101 (Thermal CVD): Optional
ET2000 (Thermal CVD):
ET3000 (Thermal CVD):
ET4000 (PECVD):
ET6000 (Thermal CVD):
Exhaust Treatment System:
ET101 (Thermal CVD): Optional
ET2000 (Thermal CVD): Optional
ET3000 (Thermal CVD): Optional
ET4000 (PECVD): Optional
ET6000 (Thermal CVD): Optional
Gas Cylinder Cabinets:
ET101 (Thermal CVD): Optional
ET2000 (Thermal CVD): Optional
ET3000 (Thermal CVD): Optional
ET4000 (PECVD): Optional
ET6000 (Thermal CVD): Optional
Reactor Type:
ET101 (Thermal CVD): Hot or Cold wall tube reactor
ET2000 (Thermal CVD): Hot or Cold wall tube reactor
ET3000 (Thermal CVD): Hot or Cold wall tube reactor
ET4000 (PECVD): Cold wall chamber
ET6000 (Thermal CVD): Multi-stack Hot wall tube reactor
Heating Method:
ET101 (Thermal CVD):
Resistance 1100°C -
Resistance 1200°C - Optional
Infrared 1100°C - Optional
RF Induction >1500°C - N/A
ET2000 (Thermal CVD):
Resistance 1100°C -
Resistance 1200°C - Optional
Infrared 1100°C - Optional
RF Induction >1500°C - N/A
ET3000 (Thermal CVD):
Resistance 1100°C -
Resistance 1200°C - Optional
Infrared 1100°C - Optional
RF Induction >1500°C - Optional
ET4000 (PECVD):
Resistance 1100°C - 400°C
Resistance 1200°C - N/A
Infrared 1100°C - Optional (800°C)
RF Induction >1500°C - N/A
ET6000 (Thermal CVD):
Resistance 1100°C -
Resistance 1200°C - Optional
Infrared 1100°C - Optional
RF Induction >1500°C - N/A
Wafer Size:
ET101 (Thermal CVD): 1”
ET2000 (Thermal CVD): 4”
ET3000 (Thermal CVD): 2”, 4”, 6”
ET4000 (PECVD): 2”, 4”, 6”
ET6000 (Thermal CVD): 2”, 4”, 6”
Number of Wafers:
ET101 (Thermal CVD): 2
ET2000 (Thermal CVD): 5-10 vertical position
ET3000 (Thermal CVD): 5-10 vertical position
ET4000 (PECVD CVD): 1
ET6000 (Thermal CVD): 50 vertical position
Wafer Rotation:
ET101 (Thermal CVD): N/A
ET2000 (Thermal CVD): Optional
ET3000 (Thermal CVD): Optional
ET4000 (PECVD): Optional
ET6000 (Thermal CVD): N/A
Vacuum Systems:
ET101 (Thermal CVD):
Wet Pump Fomblin Prepared - Optional
Dry Pump - Optional
Ultra High - N/A
ET2000 (Thermal CVD):
Wet Pump Fomblin Prepared - Optional
Dry Pump - Optional
Ultra High - N/A
ET3000 (Thermal CVD):
Wet Pump Fomblin Prepared - Optional
Dry Pump - Optional
Ultra High - Optional
ET4000 (PECVD):
Wet Pump Fomblin Prepared -
Dry Pump - Optional
Ultra High - Optional
ET6000 (Thermal CVD):
Wet Pump Fomblin Prepared - Optional
Dry Pump - Optional
Ultra High - N/A
Loadlock:
ET101 (Thermal CVD): N/A
ET2000 (Thermal CVD): Optional
ET3000 (Thermal CVD): Optional
ET4000 (PECVD): Optional
ET6000 (Thermal CVD): N/A
Hot Load:
ET101 (Thermal CVD): N/A
ET2000 (Thermal CVD): Optional
ET3000 (Thermal CVD): Optional
ET4000 (PECVD): N/A
ET6000 (Thermal CVD): Optional
Plasma - Optional:
ET101 (Thermal CVD): N/A
ET2000 (Thermal CVD): N/A
ET3000 (Thermal CVD): Remote RF plasma
ET4000 (PECVD): DC or RF plasma
ET6000 (Thermal CVD): Optional
Gas Lines - Optional:
ET101 (Thermal CVD): Up to 8
ET2000 (Thermal CVD): Up to 8
ET3000 (Thermal CVD): Up to 12
ET4000 (PECVD): Up to 12
ET6000 (Thermal CVD): 6 per tube
Liquid Source Precursor - Optional:
ET101 (Thermal CVD): Up to 3
ET2000 (Thermal CVD): Up to 3
ET3000 (Thermal CVD): Up to 4
ET4000 (PECVD): Up to 4
ET6000 (Thermal CVD): 1 per tube
Solid Source Precursor:
ET101 (Thermal CVD): Optional
ET2000 (Thermal CVD): Optional
ET3000 (Thermal CVD): Optional
ET4000 (PECVD): N/A
ET6000 (Thermal CVD): Optional
Pyrogenic Furnace:
ET101 (Thermal CVD): N/A
ET2000 (Thermal CVD): N/A
ET3000 (Thermal CVD): N/A
ET4000 (PECVD): N/A
ET6000 (Thermal CVD): Optional
System Size:
ET101 (Thermal CVD): 33"W x 44"L x 60"H
ET2000 (Thermal CVD): 30"W x 66"L x 60"H
ET3000 (Thermal CVD): 33"W x 96”/119”"L x 70"H
ET4000 (PECVD): 42"W x 96"L x 70"H
ET6000 (Thermal CVD): 43"W x 118"L x 90"H
PROCESSES:
ET101 (Thermal CVD):
Nanomaterial Synthesis
Carbon Nanotubes
Silicon Nanowires
Gallium Nitride Nanowires
Graphene
Zinc Oxide Nanowires
TCO: Doped ZnO
Atmospheric Pressure CVD
Low Pressure CVD
Epitaxial Deposition
Dry and/or Wet Oxidation
Diffusion
Silicon Nitride
Polysilicon
Silicon Dioxide
Annealing
Chemical Vapor Infiltration
Atomic Layer Deposition
Rapid Thermal Processing
ET2000 (Thermal CVD):
Nanomaterial Synthesis
Carbon Nanotubes
Silicon Nanowires
Gallium Nitride Nanowires
Graphene
Zinc Oxide Nanowires
TCO: Doped ZnO
Atmospheric Pressure CVD
Low Pressure CVD
Epitaxial Deposition
Dry and/or Wet Oxidation
Diffusion
Silicon Nitride
Polysilicon
Silicon Dioxide
Annealing
Chemical Vapor Infiltration
Atomic Layer Deposition
Rapid Thermal Processing
ET3000 (Thermal CVD):
Nanomaterial Synthesis
Carbon Nanotubes
Silicon Nanowires
Gallium Nitride Nanowires
Graphene
Zinc Oxide Nanowires
TCO: Doped ZnO
Atmospheric Pressure CVD
Low Pressure CVD
Epitaxial Deposition
Dry and/or Wet Oxidation
Diffusion
Silicon Nitride
Polysilicon
Silicon Dioxide
Annealing
Chemical Vapor Infiltration
Atomic Layer Deposition
Rapid Thermal Processing
ET4000 (PECVD):
Nanomaterial Synthesis
Carbon Nanotubes
Low Pressure CVD
Silicon Nitride
Polysilicon
Silicon Dioxide
ET6000 (Thermal CVD):
Nanomaterial Synthesis
Carbon Nanotubes
Silicon Nanowires
Graphene
Atmospheric Pressure CVD
Low Pressure CVD
Dry and/or Wet Oxidation
Diffusion
Silicon Nitride
Polysilicon
Silicon Dioxide
Annealing
Chemical Vapor Infiltration |
