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Request More InfoMULTI-TUBE HORIZONTAL FURNACE SYSTEMS
CMOS|PV|MEMS|NEMS
The EasyTube® 6000 Series
The EasyTube® 6000 series multi-tube horizontal furnace systems are automatically controlled research units for batch processing of up to 100 wafers per run per tube, with up to four separately configured process tubes.
powered by CVDWinPrC™
Operated through our process control software, the systems automatically log data and graphically show time-dependent values of user-selected parameters and more.
Gas Delivery & Exhaust Abatement
We also offer support equipment, including gas cabinets and exhaust gas conditioning systems. They can be integrated with our multi-tube furnace systems
for turnkey operation.
FEATURES
Mounting Choices
Left-hand, right-hand, bulkhead, or ballroom.
Atmospheric or Low Pressure
Each process tube can be configured for atmospheric and/or low pressure operation.
Cantilevered Loading System
Automatic cantilevered substrate loading mechanism with horizontal HEPA filtered laminar flow hood to minimize particle contamination during loading.
Cascade Temperature Control
Provides an accurate internal temperature profile with the responsiveness of external (furnace) temperature monitoring and control. Each zone is controlled separately and can be tuned automatically to provide the best thermal response and profiles.
Innovative Modular Platform
Includes a range of options that can be configured to meet your specific processing requirements. Most system options are also available as upgrades after install.
APPLICATIONS
- Complementary Metal Oxide Semiconductor (CMOS)
- Photovoltaics (PV)
- Micro Electro Mechanic Systems (MEMS)
- Nano Electro Mechanic Systems (NEMS)
PROCESSES
Annealing
• Annealing using N2 or forming gas
Oxidation
• Wet or Dry Oxidation using N2, O2, and H2O
• Wet or Dry Oxidation using N2, O2, and H2 (pyrogenic oxidation)
• Dry Oxidation using N2 and O2 (or ‘drive in’)
LPCVD
• Silicon Nitride using N2, NH3, and DCS
• Silicon Oxynitride using N2, NH3, DCS, and N2O
• Silicon Dioxide using N2, O2, and TEOS (with/ without dopants)
• Silicon using N2 and SiH4 (with/without dopants)
• Silicon and Silicon Dioxide using N2, SiH4, and O2 (with/without dopants)
• Silicon Dioxide using N2, DCS, and N2O
• Silicon Carbide using N2, SiH4, and C2H2
Dopant Diffusion
• Phosphorous Diffusion using N2, O2, and POCl3
• Phosphorous Diffusion using N2, O2, and P solid source
• Boron Diffusion using N2, O2, and B solid source
• Boron Diffusion using N2, O2, and BBr3
• Boron Diffusion using N2, O2, and BCl3
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