CMOS/MEMS/IC

Crystalline compound semiconducting materials form the foundation of many commonly used devices, including complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs), optoelectronic and photonic devices, and micro-electro-mechanical systems (MEMS). Chemical vapor deposition (CVD) is the most widely adopted industrial technique for producing semiconducting thin films. CVD processes are versatile and can be tuned to produce homoepitaxial and heteroepitaxial monocrystalline layers as well as polycrystalline and amorphous layers. A high level of dopant control allows for fine tuning of the electronic properties.

Common semiconducting materials include silicon, germanium, arsenic, antimony, etc. They can be formed in binary, ternary, quaternary etc compounds with metals such as aluminum, gallium, and indium. They are also generated in the form of oxides, nitrides and carbides. Each semiconducting material or compound has specific properties that can be exploited to realize a particular device. Complex structures such as multi-layer stacks, nanowires/nanorods and quantum dots can be produced using CVD processes.

Our FirstNano® Easytube® systems are used in CMOS and MEMS fabrication plants to perform steps in the process workflow. Examples include oxidation, diffusion, silicon deposition, oxide deposition, nitride deposition, boron phosphate silicate glass, etc. Our multi-wafer multi-tube ET6000 and ET6308 systems can be configured for multiple processes in the same system. CVD Equipment Corporation has > 33 years of experience in designing and manufacturing turn-key CVD systems. Our products meet the stringent demands required for the semiconductor industry, and provide controllable and repeatable processing.

Semiconducting materials are used for today's advanced electronics, optical devices, solar cells, and sensing technologies.