Plasma Enhanced CVD (PECVD)

Plasma enhanced chemical vapor deposition (PECVD) (also referred to as plasma assisted, PACVD) is a process technology whereby the activation energy for the CVD reaction to occur is achieved not just by temperature, but also by an energetic plasma formed in an electric (DC or RF) field. PECVD is commonly used in situations where the substrate or deposited films have a low thermal budget and would otherwise suffer from degradation if subjected to the higher temperatures required by thermal CVD. By varying the plasma we can add additional control to the properties of the deposited film.

We offer systems for DC, RF, and remote upstream PECVD.

The EasyTube® 2000 system can be configured for DC field plasma enhanced CVD processing. This system is designed with a small footprint and can process wafer sizes up to 2”.

The EasyTube® 3000 system can be configured for RF field or remote upstream plasma enhanced CVD processing. This system is capable of processing wafer sizes up to 4”.

The EasyTube® 3000EXT system has the same features as the ET3000 with a load lock added to isolate the process chamber from ambient atmosphere. This system is capable of processing wafer sizes up to 6”.

Source gasses/vapors are delivered via injectors for uniform film growth. Our modular platform includes a range of options that can be configured to meet your specific process requirements. Many of the options are field upgradable.

PECVD is required for the fabrication of many semiconductor devices. It is also used for industrial coatings where the benefits of CVD are required (conformity, high density, high purity, uniformity) but where the substrate or deposited layers cannot be subjected to high temperatures.